加州大学洛杉矶分校 段镶锋教授 7月8日下午学术报告

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加州大学洛杉矶分校 段镶锋教授 7月8日下午学术报告

发布时间:2019-06-29访问量:24设置

报告人:Prof. Xiangfeng  DuanUCLA

报告题目:Van der Waals Integration: a New Pathway to Artificial Heterostructures and High Performance Devices

报告时间:13:30 PM, July 8th ( Monday )

报告地点:909-B


报告摘要: 

The heterogeneous integration of dissimilar materials is a long pursuit of material science community and has defined the material foundation for modern electronics and optoelectronics. The typical material integration strategy such as chemical epitaxial growth usually involves strong chemical bonds and is typically limited to materials with strict structure match and processing compatibility. Alternatively, van der Waals integration, in which pre-formed building blocks are physically assembled together through weak van der Waals interactions, offers a bond-free material integration approachwithout lattice and processing limitations, as exemplified by the recent blossom of 2D vdW heterostructures. Here I will discuss van der Waals integration as a general material integration strategy for creating diverse artificial heterostructures with minimum integration-induced damage and interfacial states, enabling high-performing devices difficult to achieve with conventional “chemical integration” approach. Recent highlights include the formation of van der Waals metal/semiconductor contacts free of Fermi level pinning to reach the Schottky-Mott limit; the development of van der Waals thin films for high performance large area electronics; and the creation of a new class of van der Waals 2D-moecular superlattices with radically different layers yet atomic precision in each layer. I will conclude with a brief prospect on the potential of such heterostructures to unlock new physical limits and enable devices with unprecedented performance or entirely new functions beyond the reach of the existing materials, and the associated challenges.


个人简介:

Dr. Duan received his B.S. Degree from University of Science and Technology of China in 1997, and Ph.D. degree from Harvard University in 2002. He was a Founding Scientist and then Manager of Advanced Technology at Nanosys Inc., a nanotechnology startup founded based partly on his doctoral research. Dr. Duan joined UCLA with a Howard Reiss Career Development Chair in 2008, and was promoted to Associate Professor in 2012 and Full Professor in 2013. Dr. Duan’s research interest includes nanoscale materials, devices and their applications in future electronic, energy and health technologies. Dr. Duan has published over 200 papers with over 50,000 citations, and holds over 40 issued US patents. For his pioneer research in nanoscale science and technology, Dr. Duan has received many awards, including MIT Technology Review Top-100 Innovator Award, NIH Director’s New Innovator Award, NSF Career Award, Alpha Chi Sigma Glen T. Seaborg Award, Herbert Newby McCoy Research Award, US Presidential Early Career Award for Scientists and Engineers (PECASE), ONR Young Investigator Award, DOE Early Career Scientist Award, Human Frontier Science Program Young Investigator Award, Dupont Young Professor, Journal of Materials Chemistry Lectureship, International Union of Materials Research Society and Singapore Materials Research Society Young Researcher Award, the Beilby Medal and Prize, the Nano Korea Award, and most recently International Society of Electrochemistry Zhao-Wu Tian Prize for Energy Electrochemistry. He is currently an elected Fellow of Royal Society of Chemistry and Fellow of American Association for the Advancement of Science.


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